MG50Q2YS40 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Lista de partido
MG50Q2YS40 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter
saturation voltage
Input capacitance
Switching time
Forward voltage
Rise time
Turn-on time
Fall time
Turn-off time
Reverse recovery time
Thermal resistance
Symbol
Test Condition
IGES
ICES
VGE(off)
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC = 50mA, VCE = 5V
VCE(sat) IC = 50A, VGE = 15V
Cies
tr
ton
tf
toff
VF
trr
Rth(j-c)
VCE = 10V, VGE = 0,
f = 1MHz
IF = 50A, VGE = 0
IF = 50A, VGE = -10V
di / dt = 100A / µs
Transistor
Diode
MG50Q2YS40
Min. Typ. Max. Unit
―
―
±10
µA
―
―
1.0 mA
3.0
―
6.0
V
―
3.0
4.0
V
― 6000 ―
pF
―
0.3
0.6
―
0.4
0.8
µs
―
0.2
0.5
―
0.8
1.5
―
2.0
2.5
V
― 0.25 0.5
µs
―
― 0.31
°C / W
―
―
1.0
2
2002-09-25
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