星合电子
XINGHE ELECTRONICS
MM3Z2V0 THRU MM3Z120
0.3W SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED)
mA
50
TJ=25 C
40
IZ
30
2V7
3V9
5V6
8V2
3V3
4V7
6V8
20
Test current IZ
10
5mA
0
0
1
2
3
4
5
6
7
8
9
10 V
VZ
BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED)
mA
30
TJ=25 C
10
12
15
IZ 20
10
Test current IZ
5mA
18
22
27
33
0
0
10
20
30
40 V
VZ
3
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