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MMBF2201NT1
(Rev.:2000)

Power MOSFET 300 mAmps, 20 Volts

ON Semiconductor 

MMBF2201NT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 300 mAdc)

(VGS = 4.5 Vdc, ID = 100 mAdc)

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

(VDS = 5.0 V)

(VDS = 5.0 V)

Transfer Capacitance

(VDG = 5.0 V)

V(BR)DSS 20

IDSS

–

–

IGSS

–

VGS(th)

1.0

rDS(on)

–

–

gFS

–

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time

td(on)

–

Rise Time

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 300 mAdc,

tr

–

RL = 50 Ω)

td(off)

–

Fall Time

tf

–

Gate Charge (See Figure 5)

QT

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

–

Pulsed Current

ISM

–

Forward Voltage (Note 3.)

VSD

–

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

TYPICAL CHARACTERISTICS

Typ

Max

Unit

–

–

Vdc

µAdc

–

1.0

–

10

–

±100

nAdc

1.7

2.4

Vdc

Ohms

0.75

1.0

1.0

1.4

450

–

mMhos

45

–

pF

25

–

5.0

–

2.5

–

ns

2.5

–

15

–

0.8

–

1400

–

pC

–

0.3

A

–

0.75

0.85

–

V

1.0

0.9

0.8

VGS = 4 V

0.7

0.6

0.5

VGS = 3.5 V

0.4

0.3

VGS = 3 V

0.2

0.1

VGS = 2.5 V

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAINā-āSOURCE VOLTAGE (VOLTS)

Figure 1. Typical Drain Characteristics

1.6

1.4

1.2

VGS = 4.5 V

1.0

ID = 100 mA

0.8

0.6

0.4

VGS = 10 V

ID = 300 mA

0.2

0

-ā60 -ā40 -ā20 0 20 40 60 80 100 120 140 160

TEMPERATURE (°C)

Figure 2. On Resistance versus Temperature

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