MMBT2907A Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
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MMBT2907A Datasheet PDF : 2 Pages
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MMBT2907A
TRANSISTPR(PNP)
SOT-23
FEATURES
z Epitaxial planar die construction
z Complementary NPN Type available(MMBT2222A)
Marking: 2F
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
-60
-60
-5
-600
250
500
150
-55 to +150
Units
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=-10μA,IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO* IC=-10mA,IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA,IC=0
-5
Collector cut-off current
ICBO
VCB=-50V,IE=0
Base cut-off current
IEBO
VCE=-3V, IC =0
Collector cut-off current
ICEX
VCE=-30 V, VBE(off) =-0.5V
hFE(1)
VCE=-10V,IC=-150mA
100
hFE(2)
VCE=-10V,IC=-0.1mA
75
DC current gain
hFE(3)
VCE=-10V,IC=-1mA
100
hFE(4)
VCE=-10V,IC=-10mA
100
hFE(5)
VCE=-10V,IC=-500mA
50
Collector-emitter saturation voltage
VCE(sat)*
VCE(sat)*
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)*
VBE(sat)*
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
Transition frequency
fT
VCE=-20V,IC=-50mA,f=100MHz 200
Delay time
Rise time
td
tr
VCE=-30V,IC=-150mA,B1=-15mA
Storage time
Fall time
tS
VCE=-6V,IC=-150mA,
tf
IB1=- IB2=- 15mA
*Pulse test: tp≤300μS, δ≤0.02.
１
JinYu
semiconductor
www.htsemi.com
TYP
MAX
-20
-10
-50
300
UNIT
V
V
V
nA
nA
nA
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
10
nS
25
nS
225
nS
60
nS
Ｄａｔｅ：２０１１／０５
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