Philips Semiconductors
PHM21NQ15T
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 120 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 15 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 5 V; ID = 3 A; Figure 7 and 8
150 -
-
V
134 -
-
V
23
1.2 -
-
-
4V
-
V
4.4 V
-
-
1 µA
-
-
100 µA
-
10 100 nA
-
40 55 mΩ
-
92 127 mΩ
-
42 -
mΩ
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 20 A; VDD = 75 V; VGS = 10 V; Figure 13
-
36.2 -
nC
-
8-
nC
-
11.6 -
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
-
2080 -
pF
-
285 -
pF
-
90 -
pF
VDD = 75 V; RL = 75 Ω; VGS = 10 V; RG = 5.6 Ω -
16 -
ns
-
12 -
ns
-
50 -
ns
-
38 -
ns
VSD
source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr
recovered charge
-
0.83 1.2 V
-
150 -
ns
-
215 -
nC
9397 750 10882
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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