ML6696CH Ver la hoja de datos (PDF) - Micro Linear Corporation
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ML6696CH Datasheet PDF : 16 Pages
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ML6696
AC ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MII MANAGEMENT INTERFACE (MDC, MDIO)
tSPWS Write Setup Time, MDIO Data Valid
10
to MDC Rising Edge (1.4V Point)
tSPWH Write Hold Time, MDIO Data Valid
10
After MDC Rising Edge (1.4V Point)
tSPRS Read Setup Time, MDIO Data Valid
100
to MDC Rising Edge (1.4V Point)
tSPRH Read Hold Time, MDIO Data Valid
0
After MDC Rising Edge (1.4V Point)
tCPER Period of MDC
400
tCPW Pulsewidth of MDC
Positive or Negative Pulses
160
EEPROM INTERFACE (ECLK, EDIN, EDOUT)
tPW1
tPW2
tPER1
tDV1
ECLK Positive Pulsewidth
ECLK Negative Pulsewidth
ECLK Period
EDOUT Data Valid Time
After ECLK Rising Edge
EDIN Floating (EEPROM Mode)
EDIN Floating (EEPROM Mode)
EDIN Floating (EEPROM Mode)
EDIN Floating (EEPROM Mode)
900
900
1800
tPER2
tPW3
tPW4
tS1
tH1
ECLK Period
ECLK Positive Pulsewidth
ECLK Negative Pulsewidth
ECLK Data Setup Time
ECLK Data Hold Time
EDIN High (Microcontroller Mode)
EDIN High (Microcontroller Mode)
EDIN High (Microcontroller Mode)
EDIN High (Microcontroller Mode)
EDIN High (Microcontroller Mode)
5000
2000
2000
10
10
Note 1: Limits are guaranteed by 100% testing, sampling, or correlation with worst case test conditions.
Note 2: From first rising edge of TXCLK after TXEN goes high, to first bit of J at the MDI.
Note 3: From first bit of J at the MDI, to CRS.
Note 4: From first bit of J at the MDI, to first rising edge of RXCLK after RXDV goes high.
Note 5: Measured between the time that TXD0-3 transition above or below the region 0.8V–2.0V, and the time that TXCLK rises above 0.8V.
Note 6: Measured between the time that RXD0-3 transition above or below the region 0.8V–2.0V, and the time that RXCLK rises above 0.8V.
Note 7: Measured using a 15pF load to ground.
MAX UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
900
ns
ns
ns
ns
ns
ns
8
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