Raytheon Commercial Electronics
RMDA1840
18 to 40 GHz Broad Band Amplifier MMIC
Application Information
Recommended Application Schematic Circuit Diagram
Drain Supply
Vd=+5 V
L = Bond Wire
Inductance
10,000pF
L
L
10,000pF
100pF L
L
L
100pF
L
L
L
100pF
100pF
L
L
RF IN
RF OUT
MMIC Chip
Ground
(Back of Chip)
L
L
100pF
100pF L
L
L
L
100pF
100pF
L
L
10,000pF L
10,000pF
L
Gate
Supply
Vg
Note: For output power level detection, bias both detector and reference diodes.
DC voltage difference between detector and reference can be used to measure output power after calibration.
If output power level detection is not desired, do not make connection to detector bond pad.
Raytheon reserves the right to update or change specifications without notice.
Tel: 978-684-8663
Fax: 978-684-8778
www.raytheon.com/micro
Revised January 15, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810