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RMWB04001 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Lista de partido
RMWB04001
Fairchild
Fairchild Semiconductor Fairchild
RMWB04001 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias
supply voltage of -1.5V to Vg.
Step 3: Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 36mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
©2004 Fairchild Semiconductor Corporation
RMWB04001 Rev. C

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