RS806 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
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RS806 Datasheet PDF : 2 Pages
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BL GALAXY ELECTRICAL
RS801 --- RS807
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 8.0 A
FEATURES
Rating to 1000V PRV
Surge overload rating to 50 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
KBU
.935(23.7)
.895(22.6)
.160(4.1)
.140(3.6)
.700(17.8)
.760(19.3)Max .660(16.8)
+
+
.075(1.9)R.TYP.
_
(2 PLACES)
~ ~+
.185(4.7)
.165(4.2)
450
.085(2.2)
.065(1.7)
.455(11.3)
.405(10.3)
1.0(25.4)Min
.220(5.6)
.180(4.6)
.260(6.6)
.180(4.5)
.280(7.1)
.260(6.6)
.205(5.2)
.185(4.7)
.052(1.3)
.048(1.2)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @TA=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 4.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
RS801 RS802 RS803 RS804 RS805 RS806 RS807 UNITS
VRRM 50
100 200 400 600 800 1000
V
VRMS 35
70
140 280 420 560 700
V
VDC 50
100 200 400 600 800 1000
V
IF(AV)
8.0
A
IFSM
VF
IR
TJ
TSTG
200.0
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
A
V
μA
mA
www.galaxycn.com
Document Number 0287021
BLGALAXY ELECTRICAL
1.
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