SSE90N10-14 Ver la hoja de datos (PDF) - Secos Corporation.
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SSE90N10-14 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSE90N10-14
90A , 100V , RDS(ON) 16m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
Static
1
-
-
-
-
-
-
-
180
-
-
-
-
-
-
40
-
0.9
Dynamic 2
-
±100
1
25
-
16
19
-
-
V VDS=VGS, ID=250μA
nA VDS=0, VGS=±25V
μA VDS=80V, VGS=0
VDS=80V, VGS=0, TJ=55°C
A VDS=5V, VGS=10V
mΩ VGS=10V, ID=30A
VGS=5.5V, ID=20A
S VDS=15V, ID=20A
V IS=45A, VGS=0
Input Capacitance
Ciss
-
4221
-
Output Capacitance
Coss
-
392
-
Reverse Transfer Capacitance
Crss
-
364
-
Total Gate Charge
Qg
-
60
-
Gate-Source Charge
Qgs
-
19
-
Gate-Drain Charge
Qgd
-
39
-
Turn-on Delay Time
Td(on)
-
25
-
Rise Time
Tr
-
49
-
Turn-off Delay Time
Td(off)
-
111
-
Fall Time
Tf
-
44
-
Notes:
1 Pulse test：PW ≦ 300 μs duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
VDS=15V,
pF VGS=0,
f=1 MHz
VDS=50V,
nC VGS=5.5V,
ID=20A
VDS=50V,
VGEN=10V,
nS RL=2.5Ω,
ID=20A
RGEN=6Ω
http://www.SeCoSGmbH.com/
12-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
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