ST1S12XX(2008) Ver la hoja de datos (PDF) - STMicroelectronics

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ST1S12XX
(Rev.:2008)

Synchronous rectification with enable, 0.7 A, 1.7 MHz fixed or adjustable step-down switching regulator in TSOT23-5L

STMicroelectronics 

Electrical characteristics

ST1S12xx

Table 8.

Symbol

Electrical characteristics for ST1S12G18

VIN =VEN = 3.6 V, CIN = 4.7 µF, CO =10 µF, L = 2.2 µH, TJ = -40 to 125 °C (unless otherwise

specified. Typical values are referred to 25 °C)

Parameter

Test conditions

Min. Typ. Max. Unit

OUT

IO

VIN

Output feedback pin

VO pin bias current

Minimum input voltage

IQ

Quiescent current

IO

Output current

VEN Enable threshold

TJ =-40 to 125°C

IO= 10mA to 0.7A

VIN =VEN, VFB=2V

VEN = 0, T = -40°C to 85°C

VIN = 2.5 to 5.5V Note 1

Device ON, VI = 2.5 to 5.5V

Device OFF

1.746 1.8 1.854

V

15 20

µA

2.5

V

500 600

µA

1

µA

0.7

A

1.5

V

0.5

IEN Enable pin current

1

µA

%VO/ΔVIN Reference line regulation

VIN = 2.5V to 5.5V Note 1

0.05 0.1 %VO/ΔVIN

%VO/ΔIO Reference load regulation

IO = 10mA to 700mA Note 1

0.0025 0.005 %VO/mA

PWMfS PWM switching frequency

1.16 1.7 2.08 MHz

RDSON-N NMOS switch on resistance ISW = 100 mA

0.25 0.4

Ω

RDSON-P PMOS switch on resistance ISW = 100 mA

0.25 0.45

Ω

ISWL Switching current limitation

Note 1

1.6

A

ν

Efficiency Note 1

IO = 10mA to 100mA

IO = 100mA to 0.7A

80

%

90

TSHDN Thermal shutdown

130 150

°C

THYS Thermal shutdown hysteresis

15

°C

%VO/ΔIO Load transient response

IO = 100mA to 700mA, TA = 25°C

tR = tF ≥ 200ns, CO=22µF Note 1

-5

+5

%VO

%VO/ΔIO

Short circuit removal response

IO = 10mA to IO=short, TA = 25°C

Note 1

-10

+10 %VO

Note: 1 Guaranteed by design, but not tested in production.

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