T15N1024A Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T15N1024A

128K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T15N1024A

DATA RETENTION CHARACTERISTICS

(Ta = 0 ~ +70 °C /-40°C to 85°C)

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention Time

Operation Recovery Time

SYM.

VDR

ICCDR

tCDR

tR

TEST CONDITION

CE1 ≥ VDD -0.2V

CE2 ≤ 0.2V

VIN ≥ Vcc -0.2V or

VIN ≤ 0.2V

* VCC=1.8V

MIN.

1.5

-

0

tRC

DATA RETENTION WAVEFORM

(Ta = 0 ~ +70 °C /-40°C to 85°C)

Data Retention Mode

MAX.

-

5*

-

-

UNIT

V

uA

ns

ns

VCC

Vcc_typ

tCDR

VDR > 1.5V

tRVcc_TYP

CE1>VCC-0.2V

CE1

V IH

V IH

CE2

V IH

CE2 < 0.2V

V IH

TM Technology Inc. reserves the right

P. 9

to change products or specifications without notice.

Publication Date: FEB. 2003

Revision:E

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