T224160B Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T224160B

256K x 16 DYNAMIC RAM FAST PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T224160B

RAS

VIH

VIL

CAS

VIH

VIL

ADDR

VIH

VIL

WE VVIIHL

I/O

VIOH

VIOL

OE

VIH

VIL

FAST-PAGE-MODE READ-EARLY-WRITE CYCLE

(Pseudo READ-MODIFY-WRITE)

tRASC

tCRP

tCSH

tRCD

tPC

tC AS

tPC

tCP

tCAS

tCP

tRSH

tCAS

tRAD

tASR tR AH

ROW

tAR

tASC

tCAH

COLUMN( A)

tRCS

tASC tC AH

COLUMN(B)

tRCH

tRAL

tASC tCAH

COLUMN( N)

tWCS

tWCH

t AA

tRAC

tCAC

OPEN

tO AC

tACP

tOFF1

tCLZ

VALID

DATA (A)

t AA

tCAC

tOF F1

tDS tDH

VALID

VALID

DATA (B) NOTE1 DATA IN

tRP

tCP

ROW

RAS

VVII

H

L

CA S

VVII

H

L

A D DR

VVII

H

L

I /O

V

V

OH

OL

RAS ONLY REFRESH CYCLE

(ADDR=A0-A8 ; OE , WE =DON‘T CARE)

tCRP

tASR

tR A H

ROW

t RC

tR A S

tR P

tR PC

OP EN

Note1:Do not drive data prior to tristate.

RO W

DON'T CARE

UNDEFINED

Taiwan Memory Technology, Inc. reserves the right P. 11

to change products or specifications without notice.

Publication Date: MAR. 2001

Revision:B

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