GP250MHB06S Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP250MHB06S Datasheet PDF : 10 Pages
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GP250MHB06S
TYPICAL CHARACTERISTICS
500
Common emitter
450 Tcase = 25˚C
400
Vge = 20/15V
Vge = 12V
350
300
250
200
Vge = 10V
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
500
Common emitter
450 Tcase = 125˚C
400
Vge = 20/15V
Vge = 12V
350
300
250
200
Vge = 10V
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
30.0
Tj = 25˚C
27.5 VGE = ±15V
25.0 VCE = 300V
A
22.5
20.0
B
17.5
15.0
12.5
C
10.0
7.5
5.0
A: Rg = 15Ω
2.5
B: Rg = 10Ω
C: Rg = 5Ω
0
0
50
100 150 200 250 300
Collector current, IC - (A)
Fig.5 Typical turn-on energy vs collector current
30.0
Tj = 125˚C
27.5 VGE = ±15V
A
25.0 VCE = 300V
22.5
B
20.0
17.5
C
15.0
12.5
10.0
7.5
5.0
A: Rg = 15Ω
2.5
B: Rg = 10Ω
C: Rg = 5Ω
0
0
50
100 150 200 250 300
Collector current, IC - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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