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IR2111S Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IR2111S
IR
International Rectifier IR
IR2111S Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet No. PD60028-M
IR2111(S) & (PbF)
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Also available LEAD-FREE
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
750 & 150 ns
Deadtime (typ.)
650 ns
Description
Packages
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
8-Lead PDIP
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8-Lead SOIC
Typical Connection
up to 600V
VCC
VCC
VB
IN
IN
HO
COM
VS
LO
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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