GS880E32T-11I Ver la hoja de datos (PDF) - Giga Semiconductor
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Lista de partido
GS880E32T-11I Datasheet PDF : 25 Pages
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Preliminary
GS880E18/32/36T-11/11.5/100/80/66
Undershoot Measurement and Timing
VIH
VSS
50%
VSS – 2.0 V
20% tKC
Overshoot Measurement and Timing
VDD + 2.0 V
50%
20% tKC
VDD
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Symbol
Input Capacitance
CIN
Input/Output Capacitance
CI/O
Note: These parameters are sample tested.
Test conditions
VIN = 0 V
VOUT = 0 V
Typ. Max. Unit
4
5
pF
6
7
pF
Package Thermal Characteristics
Rating
Layer Board Symbol
Max
Unit Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
RΘJC
9
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 1.11 11/2000
12/25
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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