Preliminary
GS880E18/32/36T-11/11.5/100/80/66
Operating Currents
-11
-11.5
-100
-80
-66
Parameter
Test Conditions
Symbol 0 –40 0 –40 0 –40 0 –40 0 –40 Unit
to to to to to to to to to to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C
Device Selected;
IDD
Operating All other inputs Pipeline
225
235
225
235
225
235
200
210
185
195
mA
Current
≥VIH or ≤ VIL
Output open
IDD
Flow-Thru
180
190
180
190
180
190
175
185
165
175
mA
Standby
Current
ZZ ≥ VDD - 0.2V
ISB
Pipeline
ISB
Flow-Thru
30
30
40
40
30
30
40
40
30
30
40
40
30
30
40
40
30
30
40
40
mA
mA
Deselect
Device Deselected;
IDD
Pipeline
80
90
80
90
80
90
70
80
60
70
mA
Current
All other inputs
≥ VIH or ≤ VIL
IDD
Flow-Thru
65
75
65
75
65
75
55
65
50
60
mA
Rev: 1.11 11/2000
14/25
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.