UR5596 Ver la hoja de datos (PDF) - Unisonic Technologies
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UR5596 Datasheet PDF : 12 Pages
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UR5596
CMOS IC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Junction Temperature
Operation Temperature
Storage Temperature
PVIN, AVIN, VDDQ to GND
AVIN to GND(Note 1)
VDD
VDD
TJ
TOPR
TSTG
-0.3 ~ +6
V
2.2 ~ 5.5
V
+150
℃
0 ~ +125
℃
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
SYMBOL
θJA
RATINGS
150
ELECTRICAL CHARACTERISTICS
(TJ=25°C, VIN=AVIN=PVIN=2.5V, VDDQ=2.5V, unless otherwise specified).
PARAMETER
SYMBOL TEST CONDITIONS
VREF Voltage
VREF
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
VTT Output Voltage
IOUT = 0A
IOUT = ±1.5A
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VTT
VIN = VDDQ = 2.7V
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
Minimum Shutdown Level
High
VIH
Low
VIL
VTT Output Voltage Offset (VREF - VTT)
VosTT
VTT
IOUT = 0A
IOUT = -1.5A
IOUT = +1.5A
Quiescent Current
IQ
IOUT = 0A
Quiescent Current in Shutdown
ISD SD = 0V
Shutdown Leakage Current
IQ_SD SD = 0V
VTT Leakage Current in Shutdown
SD = 0V
IV
VTT = 1.25V
VSENSE Input Current
ISENSE
VREF Output Impedance
ZVREF IREF = -30 ~ +30 µA
VDDQ Input Impedance
ZVDDQ
Thermal Shutdown
TSD
Thermal Shutdown Hysteresis
TSD-HYS
MIN
1.130
1.235
1.335
1.125
1.225
1.325
1.125
1.225
1.325
1.9
-20
-25
-25
TYP
1.158
1.258
1.358
1.159
1.259
1.359
1.159
1.259
1.359
0
0
0
320
115
2
1
13
2.5
100
165
10
MAX
1.185
1.285
1.385
1.190
1.290
1.390
1.190
1.290
1.390
0.8
20
25
25
500
150
5
10
UNIT
℃/W
UNIT
V
V
V
mV
µA
µA
µA
µA
nA
kΩ
kΩ
℃
℃
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 12
QW-R502-045,C
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