IRF7805A Ver la hoja de datos (PDF) - International Rectifier
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IRF7805A Datasheet PDF : 8 Pages
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PD – 91746C
IRF7805/IRF7805A
HEXFET® Chip-Set for DC-DC Converters
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
The IRF7805/IRF7805A offers maximum efficiency for
mobile CPU core DC-DC converters.
SO-8
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
Device Features
IRF7805 IRF7805A
Vds
30V
30V
Rds(on) 11mΩ 11mΩ
Qg
31nC 31nC
Qsw 11.5nC
Qoss
36nC 36nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol
VDS
VGS
I
D
IDM
PD
TJ, TSTG
I
S
ISM
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
RθJA
IRF7805
IRF7805A
30
±12
13
13
10
10
100
100
2.5
1.6
–55 to 150
2.5
2.5
106
106
Units
V
A
W
°C
A
Max.
50
Units
°C/W
www.irf.com
1
10/10/00
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