IRF7807A Ver la hoja de datos (PDF) - International Rectifier
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IRF7807A Datasheet PDF : 8 Pages
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IRF7807/IRF7807A
Electrical Characteristics
Parameter
IRF7807
Min Typ Max
Drain-to-Source
Breakdown Voltage*
V(BR)DSS 30
–
–
Static Drain-Source
on Resistance*
RDS(on)
17 25
Gate Threshold Voltage* V (th) 1.0
GS
Drain-Source Leakage IDSS
30
Current*
150
IRF7807A
Min Typ Max Units
Conditions
30 – – V VGS = 0V, ID = 250µA
17 25 mΩ VGS = 4.5V, ID = 7A
1.0
V V = V , I = 250µA
DS
GS D
30 µA VDS = 24V, VGS = 0
150
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage I
GSS
Current*
±100
±100 nA V = ±12V
GS
Total Gate Charge*
Q
g
Pre-Vth
Qgs1
Gate-Source Charge
12 17
2.1
12 17
2.1
V = 5V, I = 7A
GS
D
VDS = 16V, ID = 7A
Post-Vth
Q
0.76
gs2
Gate-Source Charge
0.76
nC
Gate to Drain Charge
Switch Charge*
(Qgs2 + Qgd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
gd
QSW
Q
oss
Rg
td(on)
t
r
td (off)
tf
2.9
3.66 5.2
14 16.8
1.2
12
17
25
6
2.9
3.66
14 16.8
1.2
Ω
12
17
ns
25
6
V = 16V, V = 0
DS
GS
VDD = 16V
I = 7A
D
Rg = 2Ω
VGS = 4.5V
Resistive Load
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
Conditions
Diode Forward
VSD
Voltage*
1.2
1.2 V IS = 7A, VGS = 0V
Reverse Recovery
Qrr
80
80
Charge
Reverse Recovery
Qrr(s)
50
50
Charge (with Parallel
Schotkky)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
* Devices are 100% tested to these parameters.
2
nC di/dt = 700A/µs
V = 16V, V = 0V, I = 7A
DS
GS
S
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
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