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IRF250

HEXFET® POWER MOSFET

International Rectifier 

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JANTX2N6766, JANTXV2N6766 Device

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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12c — Max. Avalanche Energy vs. Current

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Fig. 13a — Gate Charge Test Circuit

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