IRF7822 Ver la hoja de datos (PDF) - International Rectifier
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IRF7822 Datasheet PDF : 6 Pages
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PD - 94279
IRF7822
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
S
1
A
8
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S
2
S
3
G
4
7
D
6
D
5
D
Top View
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICSU
RDS(on)
Q
G
Qsw
Qoss
IRF7822
5.0mΩ
44nC
12nC
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain CurrentQ
T = 25°C
A
TA = 70°C
Power Dissipation
T = 25°C
A
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source CurrentQ
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7822
30
±12
18
13
150
3.1
3.0
–55 to 150
3.8
150
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
07/11/01
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