IRF7811W Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF7811W Datasheet PDF : 6 Pages
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IRF7811W
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
CCuurrrreennt t*
RDS(on)
VGS(th)
I
DSS
Min Typ
30 –
9.0
1.0
Max Units
–
V
12 mΩ
V
30
150 µA
Gate-Source Leakage
IGSS
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
QG
QG
QGS1
Post-Vth
Gate-Source Charge
QGS2
Gate to Drain Charge
QGD
Switch Chg(Qgs2 + Qgd)
Qsw
Output Charge
Qoss
Gate Resistance
RG
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
td (off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
±100 nA
18 24
15.6
6.0
1.4
nC
4.1
5.5
12
2.0
Ω
11
11
ns
29
9.9
– 2335 –
– 400 – pF
– 119 –
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A
VDS = VGS,ID = 250µA
V = 24V, V = 0
DS
GS
VDS = 24V, VGS = 0,
Tj = 100°C
VGS = ±12V
VGS=5.0V, ID=15A, VDS=16V
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0
VDD = 16V, ID = 15A
VGS = 5.0V
Clamped Inductive Load
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units Conditions
Diode Forward
VSD
Voltage*
1.25 V
IS = 15A, VGS = 0V
Reverse Recovery
Qrr
Charge
45
nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Qrr(s)
41
nC di/dt = 700A/µs
Charge (with Parallel
(with 10BQ040)
Schottky)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical
values
of
RDS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at VGS = 5.0V, IF = 15A.
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