IRF5N5210(2001) Ver la hoja de datos (PDF) - International Rectifier

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IRF5N5210
(Rev.:2001)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRF5N5210

VDS

L

RG

-V2 0GVS

tp

D .U .T

IA S

0 .0 1Ω

D R IV E R

VDD

A

15V

Fig 12a. Unclamped Inductive Test Circuit

IAS

tp

V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

-10V

QGS

VG

QG

QGD

Charge

Fig 13a. Basic Gate Charge Waveform

6

800

 TOP

ID

-8.5A

-12A

BOTTOM -19A

600

400

200

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

-1122VV

.2µF

50KΩ

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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