IRF5N5210SCX Ver la hoja de datos (PDF) - International Rectifier

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IRF5N5210SCX

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRF5N5210

Footnotes:

 Repetitive Rating; Pulse width limited by

maximum junction temperature.

‚ VDD = -25 V, Starting TJ = 25°C, L = 1.9mH

Peak IAS = -19A, VGS = -10V, RG= 25Ω

ƒ ISD ≤ -19A, di/dt ≤ -390 A/µs,

VDD ≤ -100V, TJ ≤ 150°C

„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 09/2008

www.irf.com

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