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IRF5NJ3315SCX

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

IRF5NJ3315

Footnotes:

 Repetitive Rating; Pulse width limited by

maximum junction temperature.

‚ VDD = 50V, Starting TJ = 25°C, L= 1.1mH

Peak IAS = 12A, VGS =10V, RG= 25Ω

ƒ ISD ≤ 12A, di/dt ≤ 120A/µs,

VDD ≤ 150V, TJ ≤ 150°C

„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — SMD-0.5

PAD ASSIGNMENTS

1 = DRAIN

2 = GATE

3 = SOURCE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/2010

www.irf.com

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