IRFR/U6215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
-0.20 –––
––– 0.295
––– 0.58
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 66
––– 8.1
––– 35
14 –––
36 –––
53 –––
37 –––
4.5 –––
7.5 –––
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A
VGS = -10V, ID = -6.6A TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -6.6A
VDS = -120V
VGS = -10V, See Fig. 6 and 13
VDD = -75V
ID = -6.6A
RG = 6.8Ω
RD = 12Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 860 –––
––– 220 –––
––– 130 –––
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -13
A showing the
integral reverse
G
––– ––– -44
p-n junction diode.
S
––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V
––– 160 240 ns TJ = 25°C, IF = -6.6A
––– 1.2 1.7 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = -6.6A. (See Figure 12)
This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, Uses IRF6215 data and test conditions
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2
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