IRF5850(2000) Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF5850 Datasheet PDF : 9 Pages
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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD - 93947
IRF5850
HEXFET® Power MOSFET
VDSS = -20V
Top View
RDS(on) = 0.135Ω
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
maximum functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and RDS(on) reduction enables an increase in
current-handling capability.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
TSOP-6
Max.
-20
-2.2
-1.8
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
130
Units
°C/W
1
7/25/00
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