IRF5851 Ver la hoja de datos (PDF) - International Rectifier

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IRF5851

HEXFET® Power MOSFET

International Rectifier 

P-Channel

IRF5851

0.24

0.40

0.20

0.16

0.12

ID = -2.2A

0.08

2.0

3.0

4.0

5.0

6.0

7.0

-VGS, Gate -to -Source Voltage (V)

Fig 27. Typical On-Resistance Vs. Gate

Voltage

0.30

VGS = -2.5V

0.20

0.10

0

VGS = -4.5V

2

4

6

8

10

-ID , Drain Current (A)

Fig 28. Typical On-Resistance Vs. Drain

Current

QGS

VG

QG

QGD

Charge

Fig 29a. Basic Gate Charge Waveform

www.irf.com

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 29b. Gate Charge Test Circuit

11

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