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IRF7504

HEXFET® Power MOSFET

International Rectifier 

IRF7504

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

-20 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA

RDS(ON)

Static Drain-to-Source On-Resistance

––– ––– 0.27

––– ––– 0.40

Ω

VGS = -4.5V, ID = -1.2A ƒ

VGS = -2.7V, ID = -0.60A ƒ

VGS(th)

Gate Threshold Voltage

-0.70 ––– ––– V VDS = VGS, ID = -250µA

gfs

Forward Transconductance

1.3 ––– ––– S VDS = -10V, ID = -0.60A

IDSS

Drain-to-Source Leakage Current

––– ––– -1.0

––– ––– -25

µA VDS = -16V, VGS = 0V

VDS = -16V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– -100 nA VGS = -12V

––– ––– 100

VGS = +12V

Qg

Total Gate Charge

––– 5.4 8.2

ID = -1.2A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– 0.96 1.4

––– 2.4 3.6

nC VDS = -16V

VGS = -4.5V, See Fig. 6 and 9 ƒ

td(on)

Turn-On Delay Time

––– 9.1 –––

VDD = -10V

tr

td(off)

Rise Time

Turn-Off Delay Time

––– 35 –––

––– 38 –––

ns

ID = -1.2A

RG = 6.0Ω

tf

Fall Time

––– 43 –––

RD = 8.3Ω, See Fig. 10 ƒ

Ciss

Input Capacitance

––– 240 –––

VGS = 0V

Coss

Output Capacitance

––– 130 ––– pF VDS = -15V

Crss

Reverse Transfer Capacitance

––– 64 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

––– ––– -1.25

A showing the

––– ––– -9.6

integral reverse

p-n junction diode.

D

G

S

––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V ƒ

––– 52 78 ns TJ = 25°C, IF = -1.2A

––– 63 95 nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

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