IRF5806(2000) Ver la hoja de datos (PDF) - International Rectifier

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IRF5806
(Rev.:2000)

HEXFET® Power MOSFET

International Rectifier 

IRF5806

0.20

0.15

0.10

ID = -4.0A

0.05

0.00

1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5

-VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.20

0.16

0.12

VGS = -2.5V

0.08

VGS = -4.5V

0.04

0.00

0

5

10

15

20

-ID , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.

Drain Current

QG

10 V

QGS

QGD

VG

Charge

Fig 14a. Basic Gate Charge Waveform

6

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 14b. Gate Charge Test Circuit

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