IRFU9214 Ver la hoja de datos (PDF) - International Rectifier

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IRFU9214

HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A

International Rectifier 

IRFR/U9214

400

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

300

Ciss

200

100

Coss

Crss

0

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10

TJ = 150 °C

1

TJ = 25 °C

0.1

1.0

VGS = 0 V

2.0

3.0

4.0

5.0

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

20

ID = -1.7 A

16

12

VDS =-200V

VDS =-125V

VDS =-50V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

3

6

9

12

15

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

100us

1

1ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

10

10ms

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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