IRF5800 Ver la hoja de datos (PDF) - International Rectifier

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IRF5800

HEXFET Power MOSFET

International Rectifier 

IRF5800

100

10

VGS

TOP -15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

BOTTOM -2.7V

1

-2.70V

0.1

0.01

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

10

VGS

TOP -15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

BOTTOM -2.7V

1

-2.70V

0.1

0.01

0.1

20µs PULSE WIDTH

TJ= 150 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25° C

10

TJ = 150° C

1

0.1

2.0

V DS = -15V

20µs PULSE WIDTH

3.0

4.0

5.0

6.0

7.0

8.0

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = -4.0A

1.5

1.0

0.5

VGS = -10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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