IRF7751
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– –––
––– 0.020 –––
––– ––– 35
––– ––– 55
V
V/°C
mΩ
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -3.8A
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.8 ––– ––– S VDS = -10V, ID = -4.5A
IDSS
Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 29 44
ID = -4.5A
Qgs
Gate-to-Source Charge
––– 5.5 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 5.0 –––
––– 13 20
VGS = -10V
VDD = -15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 16 24 ns ID = -1.0A
––– 155 233
RG = 6.0Ω
––– 80 120
VGS = -10V
Ciss
Input Capacitance
––– 1464 –––
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 227 ––– pF VDS = -25V
––– 146 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.0
––– -18
––– -1.2
23 35
19 28
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
2
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