IRF5804 Ver la hoja de datos (PDF) - International Rectifier

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IRF5804

HEXFET® Power MOSFET

International Rectifier 

FOR REVIEW ONLY

IRF5804

100

VGS

TOP

-10V

-7.0V

-5.0V

-4.5V

10

-4.0V

-3.7V

-3.5V

BOTTOM -3.0V

1

-3.0V

0.1

0.01

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP

-10V

-7.0V

-5.0V

-4.5V

-4.0V

-3.7V

10

-3.5V

BOTTOM -3.0V

1

0.1

0.1

-3.0V

20µs PULSE WIDTH

Tj = 150°C

1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

10.00

TJ = 150°C

1.00

TJ = 25°C

0.10

3.0

VDS = -25V

20µs PULSE WIDTH

3.5

4.0

4.5

5.0

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0  ID = -2.5A

1.5

1.0

0.5

 VGS = --10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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