IRF5305S Ver la hoja de datos (PDF) - International Rectifier

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IRF5305S

HEXFET Power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A

International Rectifier 

1000

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

IRF5305S/L

1000

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

10

-4.5V

20µs PU LSE W ID TH

1

TTJc==2255°C°C

A

0.1

1

10

100

-VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

10

-4 .5 V

20µs P ULSE W ID TH

1

TTCJ == 117755°°CC

A

0.1

1

10

100

-VD S , D rain-to-S ource V oltage (V )

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 175°C

10

V DS= -25V

20µs PU LSE W ID TH

1

A

4

5

6

7

8

9

10

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0

ID = -27A

1.5

1.0

0.5

0.0

V GS = -10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Tem perature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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