IRF5305L Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRF5305L

HEXFET Power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A

International Rectifier 

IRF5305S/L

2500

2000

1500

C iss

V GS = 0V,

f = 1MHz

C iss = Cgs + C gd , Cds SH OR TE D

C rss = C gd

C oss = C ds + C gd

C oss

1000

500

Crss

0

A

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = -16A

16

V DS = -44V

V DS = -28V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

A

0

10

20

30

40

50

60

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 17 5 °C

TJ = 25°C

10

0.4

VG S = 0V A

0.8

1.2

1.6

2.0

-VSD , S ourc e-to-D rain V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA LIMITED

BY R DS(on)

100

100µs

10

1m s

TC = 25°C

TJ = 175°C

S ing le P u lse

1

1

10

10ms

A

100

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

www.irf.com

Share Link: