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IRFU5305

HEXFET® Power MOSFET

International Rectifier 

IRFR/U5305

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+

‚

-

+

Circuit Layout Considerations

• Low Stray Inductance

ƒ

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

-

„

+



RG

VGS*

**

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

-

VDD*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

[ VDD]

[ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

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