IRFB4710 Ver la hoja de datos (PDF) - International Rectifier
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IRFB4710 Datasheet PDF : 11 Pages
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IRFB/IRFS/IRFL4710
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
–––
–––
3.5
–––
–––
–––
–––
––– ––– V
0.11 ––– V/°C
0.011 0.014 Ω
––– 5.5 V
––– 1.0 µA
––– 250
––– 100
nA
––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 45A
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
35 ––– ––– S VDS = 50V, ID = 45A
Qg
Total Gate Charge
––– 110 170
ID = 45A
Qgs
Gate-to-Source Charge
––– 43 ––– nC VDS = 50V
Qgd
Gate-to-Drain ("Miller") Charge
––– 40 –––
VGS = 10V,
td(on)
Turn-On Delay Time
––– 35 –––
VDD = 50V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 130 ––– ns ID = 45A
––– 41 –––
RG = 4.5Ω
tf
Fall Time
––– 38 –––
VGS = 10V
Ciss
Input Capacitance
––– 6160 –––
VGS = 0V
Coss
Output Capacitance
––– 440 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 250 ––– pF ƒ = 1.0MHz
Coss
Output Capacitance
––– 1580 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 280 –––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 430 –––
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
190
45
20
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 75
A showing the
––– ––– 300
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 45A, VGS = 0V
––– 74 110 ns TJ = 25°C, IF = 45A
––– 180 260 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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