IRFS59N10D Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRFS59N10D Datasheet PDF : 11 Pages
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PD - 93890
SMPS MOSFET
IRFB59N10D
IRFS59N10D
IRFSL59N10D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS RDS(on) max
ID
100V
0.025Ω
59A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB59N10D
D2Pak
TO-262
IRFS59N10D IRFSL59N10D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Typical SMPS Topologies
l Half-bridge and Full-bridge DC-DC Converters
l Full-bridge Inverters
Notes through are on page 11
www.irf.com
Max.
59
42
236
3.8
200
1.3
± 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
1
4/17/00
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