IRFB59N10D Ver la hoja de datos (PDF) - International Rectifier
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IRFB59N10D Datasheet PDF : 11 Pages
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IRFB/IRFS/IRFSL59N10D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.11 ––– V/°C
––– 0.025 Ω
––– 5.5 V
––– 25 µA
––– 250
––– 100
nA
––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 35.4A
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
18 ––– ––– S VDS = 50V, ID = 35.4A
––– 76 114
ID = 35.4A
––– 24 36 nC VDS = 80V
––– 36 54
VGS = 10V,
––– 16 –––
VDD = 50V
––– 90 ––– ns ID = 35.4A
––– 20 –––
RG = 2.5Ω
––– 12 –––
VGS = 10V
––– 2450 –––
VGS = 0V
––– 740 –––
VDS = 25V
––– 190 ––– pF ƒ = 1.0MHz
––– 3370 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 390 –––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
––– 690 –––
VGS = 0V, VDS = 0V to 80V
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
–––
510
mJ
–––
35.4
A
–––
20
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Diode Characteristics
–––
0.75
0.50
–––
°C/W
–––
62
–––
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
––– ––– 59
A showing the
––– ––– 236
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V
––– 130 200 ns TJ = 25°C, IF = 35.4A
––– 0.75 1.1 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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