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IRF7452

HEXFET® Power MOSFET

International Rectifier 

IRF7452

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

100

–––

–––

3.0

–––

–––

–––

–––

–––

0.11

–––

–––

–––

–––

–––

–––

–––

–––

0.060

5.5

25

250

100

-100

V

V/°C

Ω

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 2.7A

VDS = VGS, ID = 250µA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 150°C

VGS = 24V

VGS = -24V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

3.4 ––– ––– S VDS = 50V, ID = 2.7A

––– 33 50

ID = 2.7A

––– 7.3 11 nC VDS = 80V

––– 16 24

VGS = 10V,

––– 9.5 –––

VDD = 50V

––– 11 ––– ns ID = 2.7A

––– 16 –––

RG = 6.0Ω

––– 13 –––

VGS = 10V

––– 930 –––

VGS = 0V

––– 300 –––

VDS = 25V

––– 84 ––– pF ƒ = 1.0MHz

––– 1370 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

––– 170 –––

VGS = 0V, VDS = 80V, ƒ = 1.0MHz

––– 280 –––

VGS = 0V, VDS = 0V to 80V

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

200

4.5

0.25

Units

mJ

A

mJ

Thermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambient

Typ.

–––

Max.

50

Units

°C/W

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

2

Min.

–––

–––

–––

–––

–––

Typ.

–––

–––

–––

77

270

Max.

2.3

36

1.3

120

410

Units

A

V

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 2.7A, VGS = 0V

TJ = 25°C, IF = 2.7A

di/dt = 100A/µs

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