IRFR3910TRR Ver la hoja de datos (PDF) - International Rectifier

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IRFR3910TRR

HEXFET® Power MOSFET

International Rectifier 

IRFR/U3910

1200

1000

800

V GS = 0V,

f = 1MHz

C is s = C gs + C gd , Cds S H O R T E D

C rss = C gd

C oss = Cds + C gd

C iss

600

C oss

400

Crss

200

0

A

1

10

100

V DS , Drain-to-S ourc e Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 9.0A

16

12

VDS = 80V

VDS = 50V

VDS = 20V

8

4

FO R TEST C IR CUIT

SEE FIGURE 13

0

A

0 5 10 15 20 25 30 35 40 45

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED

BY R DS(on)

TJ = 175°C

10

TJ= 25°C

1

VG S = 0V A

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

10µs

10

100µs

TC = 25°C

TJ = 175°C

S ing le P u lse

1

1

10

1ms

10m s

100

VDS , Drain-to-Source Voltage (V)

A

1000

Fig 8. Maximum Safe Operating Area

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