IRF520 Ver la hoja de datos (PDF) - International Rectifier
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IRF520 Datasheet PDF : 9 Pages
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IRF520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.20 Ω VGS = 10V, ID = 5.7A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
2.7 ––– ––– S VDS = 50V, ID = 5.7A
––– ––– 25
––– ––– 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 25
ID = 5.7A
––– ––– 4.8 nC VDS = 80V
––– ––– 11
VGS = 10V, See Fig. 6 and 13
––– 4.5 –––
VDD = 50V
––– 23 ––– ns ID = 5.7A
––– 32 –––
RG = 22Ω
––– 23 –––
RD = 8.6Ω, See Fig. 10
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
S
––– 330 –––
VGS = 0V
––– 92 ––– pF VDS = 25V
––– 54 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
99
390
Max.
9.7
38
1.3
150
580
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 5.7A, VGS = 0V
TJ = 25°C, IF = 5.7A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 5.7A. (See Figure 12)
ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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