IRF7473 Ver la hoja de datos (PDF) - International Rectifier

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IRF7473

HEXFET® Power MOSFET

International Rectifier 

IRF7473

0.028

0.035

0.026

0.024

VGS = 10V

0.030

0.025

ID = 6.9A

0.022

0

20

40

60

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

0.020

6.0

8.0

10.0

12.0

14.0

16.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

400

ID

TOP

1.8A

3.3A

BOTTOM 4.1A

300

200

V (B R )D SS

tp

IAS

VDS

L

RG

12 00VV

tp

D .U .T

IA S

0.01Ω

15V

DRIVE R

+

- VD D

A

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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