IRF3315S Ver la hoja de datos (PDF) - International Rectifier
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IRF3315S Datasheet PDF : 10 Pages
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IRF3315S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.082 Ω VGS = 10V, ID = 12A
2.0 ––– 4.0
17 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 50V, ID = 12A
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 120V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 95
ID = 12A
––– ––– 11
––– ––– 47
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13
––– 9.6 –––
VDD = 75V
––– 32 ––– ns ID = 12A
––– 49 –––
RG = 5.1Ω
––– 38 –––
RD = 5.9Ω, See Fig. 10
–––
7.5 –––
nH
Between lead,
and center of die contact
––– 1300 –––
VGS = 0V
––– 300 ––– pF VDS = 25V
––– 160 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 21
A showing the
––– ––– 84
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
––– 174 260 ns TJ = 25°C, IF = 43A
––– 1.2 1.7 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
VDD = 25V, starting TJ = 25°C, L = 4.9 mH
RG = 25Ω, IAS = 12A. (See Figure 12)
Uses IRF3315 data and test conditions
ISD ≤ 12A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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