IRF7465 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF7465 Datasheet PDF : 8 Pages
| |||
IRF7465
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
–––
0.19
–––
–––
–––
–––
–––
–––
–––
–––
0.28
5.5
25
250
100
-100
V
V/°C
Ω
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 1.14A
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
0.75 ––– ––– S VDS = 50V, ID = 1.14A
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
––– 10 15
––– 2.7 4.0
ID = 1.14A
nC VDS = 120V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 5.0 7.5
––– 7.0 –––
VGS = 10V
VDD = 75V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 1.2 ––– ns ID = 1.14A
––– 10 –––
RG = 6.0Ω
––– 9.0 –––
VGS = 10V
––– 330 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 80 –––
VDS = 25V
––– 16 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 420 –––
––– 41 –––
––– 76 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Typ.
–––
–––
Max.
40
1.9
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.3
A showing the
integral reverse
G
––– ––– 15
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 1.14A, VGS = 0V
––– 62 93 ns TJ = 25°C, IF = 1.14A
––– 160 240 nC di/dt = 100A/µs
www.irf.com
Share Link: 