IRFBA90N20D Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRFBA90N20D Datasheet PDF : 8 Pages
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PD - 94300
SMPS MOSFET IRFBA90N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.023Ω
ID
98A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Super-220™
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended Clip Force
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Max.
98
71
390
650
4.3
± 30
6.3
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
0.50
–––
Max.
0.23
–––
58
Units
°C/W
1
09/06/01
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