IRF7456 Ver la hoja de datos (PDF) - International Rectifier
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IRF7456 Datasheet PDF : 8 Pages
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IRF7456
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 ––– –––
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 –––
––– 0.00470.0065
RDS(on)
Static Drain-to-Source On-Resistance ––– 0.00570.0075
––– 0.011 0.020
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
0.6 ––– 2.0
––– ––– 20
––– ––– 100
Gate-to-Source Forward Leakage
––– ––– 200
IGSS
Gate-to-Source Reverse Leakage
––– ––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
VGS = 2.8V, ID = 3.5A
V VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
Qg
Total Gate Charge
44 ––– –––
––– 41 62
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 9.7 15
––– 18 27
td(on)
tr
Turn-On Delay Time
Rise Time
––– 20 –––
––– 25 –––
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 50 –––
––– 52 –––
Ciss
Input Capacitance
Coss
Output Capacitance
––– 3640 –––
––– 1570 –––
Crss
Reverse Transfer Capacitance
––– 330 –––
Units
S
nC
ns
pF
Conditions
VDS = 10V, ID = 16A
ID = 16A
VDS = 16V
VGS = 5.0V,
VDD = 10V
ID = 1.0A
RG = 6.0Ω
VGS = 4.5V
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
250
16
0.25
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.5
A showing the
integral reverse
G
––– ––– 130
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
––– 48 72 ns TJ = 25°C, IF = 2.5A
––– 74 110 nC di/dt = 100A/µs
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