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IRF3711

HEXFET® Power MOSFET

International Rectifier 

IRF3711/3711S/3711L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

1.0

–––

IDSS

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.022 –––

4.7 6.0

6.2 8.5

––– 3.0

––– 20

––– 100

––– 200

––– -200

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 15A

VGS = 4.5V, ID = 12A

V VDS = VGS, ID = 250µA

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max.

gfs

Forward Transconductance

53 ––– –––

Qg

Total Gate Charge

––– 29 44

Qgs

Gate-to-Source Charge

––– 7.3 –––

Qgd

Gate-to-Drain ("Miller") Charge

––– 8.9 –––

Qoss

Output Gate Charge

––– 33 –––

td(on)

Turn-On Delay Time

––– 12 –––

tr

Rise Time

––– 220 –––

td(off)

Turn-Off Delay Time

––– 17 –––

tf

Fall Time

––– 12 –––

Ciss

Input Capacitance

––– 2980 –––

Coss

Output Capacitance

––– 1770 –––

Crss

Reverse Transfer Capacitance

––– 280 –––

Units

S

nC

ns

pF

Conditions

VDS = 16V, ID = 30A

ID = 15A

VDS = 10V

VGS = 4.5V

VGS = 0V, VDS = 10V

VDD = 10V

ID = 30A

RG = 1.8Ω

VGS = 4.5V

VGS = 0V

VDS = 10V

ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

–––

–––

Max.

460

30

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

–––

0.88

0.82

50

61

48

65

Max.

110

440

1.3

–––

75

92

72

98

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 30A, VGS = 0V

TJ = 125°C, IS = 30A, VGS = 0V

TJ = 25°C, IF = 16A, VR=10V

di/dt = 100A/µs

TJ = 125°C, IF = 16A, VR=10V

di/dt = 100A/µs

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